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Publications since 1992

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2004

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2003

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2002

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2001

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2000

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1999

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1998

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1997

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1996

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1995

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1994

  • C.-H. Solterbeck, D. Samuelsen, A. Yang, W. Schattke, Plasmon Enhancement of Photoemission from Semiconductor Surface States, in: B. Lengeler, H. Lüth, W. Mönch and J. Pollmann (ed.), Formation of Semiconductor Interfaces, World Scientific, Singapore 1994, p. 61
  • A. Bödicker and W. Schattke, Electronic Structure of the Interface of GaAs(110)/Sb(xL), in: B. Lengeler, H. Lüth, W. Mönch and J. Pollmann (ed.), Formation of Semiconductor Interfaces, World Scientific, Singapore 1994, p. 223
  • A. Bödicker, W. Schattke, J. Henk, R. Feder, Interface electronic structure by the Renormalization Method: Theory and Application to Sb/GaAs, J. Phys.: Condens. Matter 6, 1927 (1994); Erratum, J. Phys.: Condens. Matter 6, 7143 (1994)
    Paper with incomplete figures
  • J.-V. Peetz, W. Schattke, Non-Muffin-Tin Atomic Scattering-Matrices for Semiconductor LEED-Calculations, J. Electron Spectrosc. 68, 167 (1994)
  • C.-H. Solterbeck, D. Samuelsen, A. Yang, W. Schattke, Estimation of Photoemission Intensities and the Surface Photoelectric Effect, J. Electron Spectrosc. 68, 313 (1994)
  • M. Stobbe, R. Redmer, W. Schattke, Impact Ionization Rate in GaAs, Phys. Rev. B 49, 4494 (1994)
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1993

  • J. Henk, W. Schattke, H. Carstensen, R. Manzke, M. Skibowski, Surface Barrier and Polarization Effects in the Photoemission from GaAs(110), Phys. Rev. B47, 2251 (1993)
  • D. Samuelsen, Ailing Yang, W. Schattke, Detection of the Longitudinal Photon Field in Surface Screening by Photoemission Spectra, Surf. Sci. 287, 676 (1993)
  • J. Henk, W. Schattke, A Subroutine Package for Computing Green's Functions of Relaxed Surfaces by the Renormalization Method, Comput. Phys. Commun., 77, 69 (1993)
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1992

  • D. Samuelsen, E. Pehlke, W. Schattke, O. Anderson, R. Manzke, M. Skibowski, Observation of Surface-Induced Photon Fields in the Photoemission of 1T-TiS2, Phys. Rev. Lett. 68, 522 (1992)
  • J.-V. Peetz, W. Schattke, H. Carstensen, R. Manzke, M. Skibowski, Analysis of TCS-data of GaAs(110) with VLEED-calculations, Phys. Rev. B 46, 10127 (1992)
  • K.-U. Gawlik, J. Brügmann, S. Harm, C. Janowitz, R. Manzke, M. Skibowski, C.-H. Solterbeck, W. Schattke, B. A. Orlowski, Electronic Structure of the CdTe(100)-(1x1) Surface, Acta Phys. Pol. A 82, 355 (1992)
  • R. Schnurpfeil, J.-V. Peetz, W. Schattke, LEED-I(U)-Investigations of the Structure of the As-Terminated GaAs(-1 -1 -1) (2x2)-Surface, in: Ping Jiang and Hou-Zhi Zheng (ed.), The Physics of Semiconductors, World Scientific, Singapore 1992, Vol. 1, p. 425
  • K.-U. Gawlik, J. Brügmann, S. Harm, C. Janowitz, R. Manzke, M. Skibowski, C.-H. Solterbeck, W. Schattke and B. A. Orlowski, Surface Band Structure of CdTe (100)-(1x1), in: Ping Jiang and Hou-Zhi Zheng (ed.), The Physics of Semiconductors, World Scientific, Singapore 1992, Vol. 1, p. 485
  • C.-H. Solterbeck, W. Schattke, Electronic Structure of Different CdTe-Surfaces, in: Ping Jiang and Hou-Zhi Zheng (ed.), The Physics of Semiconductors, World Scientific, Singapore 1992, Vol. 1, p. 538

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27 Aug 2002
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