Azimuthal dependence of GaAs(110) photoemission spectra

Valence band photoemission spectroscopy usually detects the current for emission angles and corresponding k-values on high symmetry lines of the reciprocal space. On the other hand, photoelectron diffraction considers the emission into the full hemisphere and therefore probes not only the polar but also the azimuthal dependence. To take advantage of such additional information and to proceed towards a common understanding of both methods, azimuthal scans of the UV-photoemission from the GaAs(110) surface are investigated. We compare results of a new theoretical determination of the valence band photoemission spectra with new experimental data.

Fig. 1: Photoemission intensities from GaAs(110) at an initial energy of -0.75 eV from the calculation (violet) and of -0.9 eV from the experiment (blue). The inset shows the surface density of states for -0.75 eV. Fig. 2: Theoretical currents for -0.75 eV (red) and for -0.9 eV (blue). The inset shows the surface density of states for -0.9 eV.
Even this preliminary glance at the data allows to make some observations:

  • There is an excellent agreement between experiment and theory.
  • The azimuthal scans show distinct topologies.
  • The azimuthal pattern varies strongly with the binding energy.
Further investigations are needed to explain the angular distribution of the photocurrent.

See also:

1996 Claus-Henning Solterbeck
CAU Kiel
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12.10.1997